%0 Journal Article
%4 sid.inpe.br/mtc-m21c/2018/07.13.15.02
%2 sid.inpe.br/mtc-m21c/2018/07.13.15.02.54
%T Electron hopping energy influence on the specific heat of phosphorus doped silicon
%D 1982
%9 journal article
%A Silva, Antônio Ferreira da,
%A Fabbri, Maurício,
%A Lima, Ivan Costa da Cunha,
%@affiliation Instituto Nacional de Pesquisas Espaciais (INPE)
%@affiliation Instituto Nacional de Pesquisas Espaciais (INPE)
%@affiliation Instituto Nacional de Pesquisas Espaciais (INPE)
%B Physica Status Solid
%V Submitted
%P 1-17
%K Specific heat, doped semiconductors.
%X lhe electronic specific heat of the uncompensanted Si :P is calculated via a previously developed theory for impurity band in semiconductors. lhe theory is investigated further in arder to take into account the effect of correlation, as well as overlap on the electron hopping energy integral via Heitler-London two-particle wave fUnctions. The calculated specific heat shows a rough agreement when compared to the experimental data over a wide range of donor impurity concentration. The comparUon with AMO-MT calculation shows a large enhancement due to a stronger electron corre lation. The results of the highly-correlated-electron-gas modal and inhomogeneity model are shown for the sake of comparison.
%@language en
%3 2301.pdf